SSI3139J-C Description
SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).
SSI3139J-C Key Features
- High side switching
- Low on-resistance
- Low threshold
- Fast switching speed
SSI3139J-C is Dual P-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Part Number | Description |
|---|---|
| SSI318-C | Dual N-Channel MOSFET |
| SSI3439J | N & P-Ch Enhancement Mode Power MOSFET |
| SSI2007 | Power MOSFET |
| SSI2085E-C | N & P-Ch Enhancement Mode Power MOSFET |
| SSI20N5E-C | Dual N-Ch Enhancement Mode Power MOSFET |
SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).