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SSI3139J-C - Dual P-Ch Enhancement Mode Power MOSFET

General Description

SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON).

Key Features

  • High side switching.
  • Low on-resistance.
  • Low threshold.
  • Fast switching speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSI3139J-C -0.66A, -20V, RDS(ON) 520mΩ Dual P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SSI3139J-C is a Dual P-Channel MOS which has been designed to be used as a Power Trench process to optimize RDS(ON). SOT-563 FEATURES  High side switching  Low on-resistance  Low threshold  Fast switching speed APPLICATIONS  Load/power switching  Power supply converter circuits  Battery-operated system MARKING 39K PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SSI3139J-C Lead (Pb)-free and Halogen-free REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J K Millimeter Min. Max. 0.