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SSL40N03 - N-Channel Enhancement Mode Power MosFET

General Description

The SSL40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Fast Switching.
  • Simple Drive Requirement.
  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated D REF. A b L4 c L3 L1 E G Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.27 REF. S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. net Symbol VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SSL4407 P-Channel Enhancement Mode Power MosFET
SSL6679 P-Channel Enhancement Mode Power Mos.FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSL40N03 Elektronische Bauelemente 40A, 30V,RDS(ON)17 m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSL40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Fast Switching * Simple Drive Requirement * Dynamic dv/dt Rating * Repetitive Avalanche Rated D REF. A b L4 c L3 L1 E G Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.