Datasheet4U Logo Datasheet4U.com

SSPS7338N - N-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) trench technology Low thermal impedance Fast switching speed.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSPS7308NA N-Channel MOSFET SeCoS Halbleitertechnologie
SSPS7630N N-Channel MOSFET SeCoS Halbleitertechnologie
SSPS920NE N-Channel MOSFET SeCoS Halbleitertechnologie
SSPS924NE N-Ch Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie
SSPS924NE Dual N-Channel 20V MOSFET VBsemi

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SSPS7331P-C P-Channel MOSFET
SSPS7332N-C N-Ch Enhancement Mode Power MOSFET
SSP45N10 N-Channel Enhancement Mode MOSFET
SSP7431P P-Channel MOSFET
SSP7440N N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SSPS7338 19A, 30V, RDS(O ) 6.9 mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATION Industrial D/C/DC conversion circuits White LED boost converters Automotive systems PACKAGE INFORMATION Package MPQ DFN3x3-8PP 3K Leader Size 13 inch DFN3x3-8PP B D C θ eE A db g F G REF. A B C D E F G Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.