SSPS7338N Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSPS7338N Key Features
- 55~150
- Diode Forward Voltage
- Dynamic 1
- 20 Qgs
- Gate-Drain Charge
- Input Capacitance
- Output Capacitance
- Reverse Transfer Capacitance
- Turn-On Delay Time
- Rise Time