SSQ04N65J Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 4A, 650V, RDS(ON) 3 Ω N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor control and bridge circuits. TO-220J Features High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G...