SSQ04N65J - N-Channel MOSFET

Product Overview

SeCoS

Part number	SSQ04N65J
Manufacturer	SeCoS
File Size	245.73 KB
Description	N-Channel MOSFET
Datasheet	SSQ04N65J Datasheet
Additional preview pages of the SSQ04N65J datasheet.

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millimeter Min. Max. 4.980 5.180 3.560 3.960 4.470 4.670 1.200 1.400 8.500 8.900 2.520 2.820 0.330 0.650 D 2 1 G 3 S.

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Published: May 19, 2020 |