SSQ07N60J Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 7 A, 600 V, RDS(ON) 1.3 Ω N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls, these devices are particularly well suited for...