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SST1N20-C - N-Ch Enhancement Mode Power MOSFET

General Description

The SST1N20-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SST1N20-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SST1N20-C 1A, 200V, RDS(ON) 1.35Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SST1N20-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST1N20-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-26 A E L B FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J MARKING 1N20 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SST1N20-C Lead (Pb)-free and Halogen-free REF.