Datasheet Details
| Part number | SST2623 |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 421.00 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SST2623 Datasheet
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General Description
0.37Ref.
0.20 0.60 Ref.
The SST2623 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
Key Features
- Low On-Resistance.
- Low Gate Charge D1 D2 Dimensions in millimeters D1 6 S1 5 D2 4 G1 G2 Date Code 2623 S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -2 -1.6 -20 1.2 0.