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SST3585S - N And P-Channel Enhancement Mode Power MOSFET

General Description

The SST3585S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The SST3585S meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Low Gate Charge Low On-resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SST3585S 4.3A, 20V, RDS(ON) 37mΩ -3.1A, -20V, RDS(ON) 75mΩ N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SST3585S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SST3585S meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Low Gate Charge Low On-resistance MARKING F DG SOT-26 A E L B C K H J 3585 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.25 0.50 REF.