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SST3585 - N And P-Channel Enhancement Mode Power MosFET

Datasheet Summary

Description

The SST3585 provide the designer with best combination of fast switching,low on-resistance and cost effectiveness.

The SOT-26 package is universally used for all commercial-industrial surface mount applications.

Features

  • RoHS Compliant.
  • Low Gate Charge D1 6 S1 5 D2 4 0 o 10 o 0.7 1.45 Dimensions in millimeters.
  • Low On-resistance D1 D2 Date Code 3585 G1 S1 G2 1 G1 2 S2 3 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 o o Ratings 20 ±12 3.5 2.8 10 1.14 0.01 Unit -20 ±12 -2.5 -1.97 -10 V V A A A W W/ C o o T otal Power Di.

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Datasheet Details

Part number SST3585
Manufacturer SeCoS
File Size 1.04 MB
Description N And P-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SST3585 Datasheet
Additional preview pages of the SST3585 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.net Elektronische Bauelemente 3.5 A, 20V ,RDS(ON)75mΩ -2.5 A, -20V ,RDS(ON)160mΩ N And P-Channel Enhancement Mode Power Mos.FET SST3585 SOT-26 Description The SST3585 provide the designer with best combination of fast switching,low on-resistance and cost effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications. 1.90REF 0.95REF 0.95REF 1.2 REF 0.45 REF 2.60 3.00 1.40 1.80 0.30 0.55 2.70 3.10 0.60 REF 0.10 Max Features * RoHS Compliant * Low Gate Charge D1 6 S1 5 D2 4 0 o 10 o 0.7 1.
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