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SST6601-C Datasheet N And P-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SST6601-C 3.7A, 30V, RDS(ON) 55mΩ -2.

General Description

The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SST6601-C meet the RoHS and Green Product requirement with full function reliability approved.

SOT-26 A E L

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

SST6601-C Distributor