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SSY5829P

Manufacturer: SeCoS Halbleitertechnologie GmbH

SSY5829P datasheet by SeCoS Halbleitertechnologie GmbH.

SSY5829P datasheet preview

SSY5829P Datasheet Details

Part number SSY5829P
Datasheet SSY5829P-SeCoS.pdf
File Size 652.97 KB
Manufacturer SeCoS Halbleitertechnologie GmbH
Description P-Channel MOSFET
SSY5829P page 2 SSY5829P page 3

SSY5829P Overview

The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers,PCMCIA cards, cellular and cordless telephones.

SSY5829P Key Features

  • Low RDS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe 1206-8CF saves board space
  • Fast switching speed
  • High performance trench technology
  • 2.5 A, -20 V, RDS(ON) 0.110  P-Channel Enhancement MOSFET
  • Dynamic 2

SSY5829P Applications

  • Low RDS(on) provides higher efficiency and extends battery life
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