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SSY5829P - P-Channel MOSFET

Description

The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe 1206-8CF saves board space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet Details

Part number SSY5829P
Manufacturer SeCoS
File Size 652.97 KB
Description P-Channel MOSFET
Datasheet download datasheet SSY5829P Datasheet

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Full PDF Text Transcription

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Elektronische Bauelemente SSY5829P -2.5 A, -20 V, RDS(ON) 0.110  P-Channel Enhancement MOSFET With Schottky Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones. 1206-8CF FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe 1206-8CF saves board space.  Fast switching speed.  High performance trench technology.
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