STT3921P Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -2.5A , -20V , RDS(ON) 130mΩ P-Channel Enhancement Mode MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Features Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless...