Datasheet Summary
Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 mΩ P-Channel Enhancement Mode Mos.FET
RoHS pliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications.
Features z z z
N-Channel Lower Gate Charge Small Footprint & Low Profile Package
PACKAGE DIMENSIONS
REF. A A1 A2 c D E E1
Millimeter Min. Max.
1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max.
0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90...
