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STT6405 - P-Channel MOSFET

General Description

The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Key Features

  • z z z N-Channel Lower Gate Charge Small Footprint & Low Profile Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 mΩ P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES z z z N-Channel Lower Gate Charge Small Footprint & Low Profile Package PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.