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STT6602 - MOSFET

General Description

The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

The TSOP-6 package is universally used for all commercial-industrial surface mount applications.

Key Features

  • Low Gate Change Low On-resistance 1 2 3 F DG K C H J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E TSOP-6 L 6 5 4 B FEATURES Low Gate Change Low On-resistance 1 2 3 F DG K C H J MARKING REF. 6602 Date Code A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.