| Part number | STT6601 |
|---|---|
| Datasheet | STT6601-SeCoS.pdf |
| File Size | 485.76 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | MOSFET |
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The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery-powered circuits where high-side switching, low...
See all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| STT6602 | MOSFET |
| STT6405 | P-Channel MOSFET |
| STT6802 | N-Channel MOSFET |
| STT2605-C | P-Channel Enhancement Mode Power MOSFET |
| STT3402N | N-Channel MOSFET |
| STT3405P | P-Channel MOSFET |
| STT3423P | P-Channel MOSFET |
| STT3434 | N-Channel MOSFET |
| STT3434N | N-Channel MOSFET |
| STT3455 | P-Channel MOSFET |
