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STT6601 - MOSFET

General Description

The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • z.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. FEATURES z APPLICATIONS z z z z z z z z N-Channel 30V/2.