SeCoS Halbleitertechnologie GmbH 2SA727
PNP Silicon General Purpose Transistor
FEATURES
High current output up to -3A Low saturation voltage TSOP-6 A E L 654 MARKING B 727 = Date Code 123 F CH DG K J PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7’ inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation @ TC=25°C 3 Thermal Resistance Junction-ambient Max 1 Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PD RθJC TJ, TSTG Ratings -40 -30 -5 -3 1.2 105 150, -55 ~ 150 Unit V V V A W °C/W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -40 - - V IC= -100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -30 - - V IC= -1m...