Seme LAB 2N3502
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
MECHANICAL DATA
Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min.FEATURES
● SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO18 METAL PACKAGE PIN 1 – Emitter PIN 2 – Base 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) PIN 3 – Collector 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )APPLICATIONS
: 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 1 2 .7 0 (0 .5 0 0 ) m in . 5 .0 8 (0 .2 0 0 ) ty p . These PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps. 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 4 5 ° TO5 METAL PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – CollectorABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) Maximum Voltages VCBO VCEO VEBO Collector – B...