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2N3553 Datasheet PDF

Seme LAB 2N3553

The 2N3553 is designed for amplifier and oscillator applications in military and industrial equipment.
Part No. 2N3553
Datasheet 2N3553 Download
Manufacturer
Seme LAB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
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2N3553 datasheet page 1 preview

MECHANICAL DATA

Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 2.54 (0.100) 45° TO-39 (TO - 205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector NPN SILICON HIGH FREQUENCY TRANSISTOR

APPLICATIONS

Suitable for use as output, driver or pre-driver stages in VHF equipment.

FEATURES

● Fast Switching
● Low Leakage Current

ABSOLUTE MAXIMUM RATINGS

(TA = 25°c unless otherwise stated) VCEO Collector – Emitter Voltage VCBO Collector – Base Voltage VEBO Emitter – Base Voltage IC Continuous Collector Current PD Total Device Disipation @ TCase = 25°C Derate above 25°C Tj , Tstg Operating and Storage Junction Temperature Range 40V 65V 4.0V 1A 7W 40mW/°C
2N3553 page 2 preview