2N3553 Description
The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case. DESCRIPTION emitter 1 2 MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCEX VCEO ICM Ptot Tj fT PARAMETER collector-emitter voltage collector-emitter voltage peak collector current total power dissipation junction temperature transition frequency IC = 125 mA;.