| Part Number | 2N3553 Datasheet |
|---|---|
| Manufacturer | ASI |
| Overview | The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. MAXIMUM RATINGS IC 1.0 A VCE PDISS TJ TSTG θJC 40 V 7.0 W @ TC = 25 OC -65 OC to +200 OC -. . |
2N3553 Datasheet and Specifications PDF
The 2N3553 is a NPN SILICON RF TRANSISTOR.
| Part Number | 2N3553 Datasheet |
|---|---|
| Description | HIGH FREQUENCY TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | 2N3553 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and S. . |
| Part Number | 2N3553 Datasheet |
|---|---|
| Description | Silicon planar epitaxial overlay transistor |
| Manufacturer | NXP Semiconductors |
| Overview | The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case. DESCRIPTION emitter 1 2 MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA S. f (MHz) 175 VCE (V) 28 Po (W) 2.5 Gp (dB) >10 η (%) >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware o. |
| Part Number | 2N3553 Datasheet |
|---|---|
| Description | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview |
2N3553
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 .
* Fast Switching * Low Leakage Current ABSOLUTE MAXIMUM RATINGS(TA = 25°c unless otherwise stated) VCEO Collector * Emitter Voltage VCBO Collector * Base Voltage VEBO Emitter * Base Voltage IC Continuous Collector Current PD Total Device Disipation @ TCase = 25°C Derate above 25°C Tj , Ts. |