2N6315 - COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS

Seme LAB

Key Features

Low Collector Emitter Saturation Voltage.
Low Leakage Current.
Excellent DC Current Gain.

2N6315 complementary silicon medium power transistors by Seme LAB - Datasheet Preview

Datasheet Details

Part number	2N6315
Manufacturer	Seme LAB
File Size	16.21 KB
Description	COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
Datasheet	2N6315 Datasheet

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Other Datasheets by Seme LAB

Part Number	Description
2N6312	Bipolar PNP Device
2N6317	COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
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2N6301	DARLINGTON SILICON POWER TRANSISTORS
2N6302	Bipolar NPN Device

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MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.