2N6317 Datasheet PDF

MECHANICAL DATA

Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector

FEATURES

● Low Collector Emitter Saturation Voltage
● Low Leakage Current
● Excellent DC Current Gain

APPLICATIONS

: Designed for general purpose amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS

(Tc = 25°C unless otherwise stated) VCEO Collector – Emitter Voltage VCBO Collector – Base Voltage VEBO Emitter – Base Voltage IC Collector Current Continuous Peak IB Base Current PD Total Dissipation @ TC = 25°C Derate above 25°C TSTG , TJ RθJC Operating and