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2N6317 - COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS

Download the 2N6317 datasheet PDF. This datasheet also covers the 2N6315 variant, as both devices belong to the same complementary silicon medium power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Collector Emitter Saturation Voltage.
  • Low Leakage Current.
  • Excellent DC Current Gain.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6315-SemeLAB.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6317
Manufacturer Seme LAB
File Size 16.21 KB
Description COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
Datasheet download datasheet 2N6317 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications.