2N6676 datasheet by Seme LAB.
| Part number | 2N6676 |
|---|---|
| Datasheet | 2N6676-SemeLAB.pdf |
| File Size | 10.68 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar NPN Device |
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2N6676 Dimensions in mm (inches). VCEO = 300V IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO IC(CONT) hFE ft PD Test Conditions @ 3/15 (VCE / IC) Maximum Working Voltage Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6676 | NPN POWER TRANSISTORS | GE |
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2N6676 | (2N66xx) NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N6676 | NPN High Power Silicon Transistor | VPT |
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2N6676 | NPN SILICON POWER TRANSISTOR | Central Semiconductor |
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2N6676 | NPN High Power Silicon Transistor | MA-COM |
| Part Number | Description |
|---|---|
| 2N6671 | Bipolar NPN Device |
| 2N6672 | Bipolar NPN Device |
| 2N6673 | Bipolar NPN Device |
| 2N6675 | Bipolar NPN Device |
| 2N6677 | Bipolar NPN Device |
| 2N6678 | HIGH VOLTAGE NPN POWER TRANSISTOR |
| 2N6653 | Bipolar NPN Device |
| 2N6654 | Bipolar NPN Device |
| 2N6655 | Bipolar NPN Device |
| 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
