| Part number | 2N6676 |
|---|---|
| Download | 2N6676 Datasheet (PDF) |
| File Size | 10.68 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar NPN Device |
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| Manufacturer | Part Number | Description |
|---|---|---|
GE |
2N6676 | NPN POWER TRANSISTORS |
Microsemi |
2N6676 | (2N66xx) NPN POWER SILICON TRANSISTOR |
VPT Components |
2N6676 | NPN High Power Silicon Transistor |
Central Semiconductor |
2N6676 | NPN SILICON POWER TRANSISTOR |
MACOM Technology Solutions |
2N6676 | NPN High Power Silicon Transistor |
2N6676 Dimensions in mm (inches). VCEO = 300V IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO IC(CONT) hFE ft PD Test Conditions @ 3/15 (VCE / IC) Maximum Working Voltage Min.
