2N6675 datasheet by Seme LAB.
| Part number | 2N6675 |
|---|---|
| Datasheet | 2N6675-SemeLAB.pdf |
| File Size | 10.30 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar NPN Device |
|
|
|
2N6675 Dimensions in mm (inches). VCEO = 400V IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO IC(CONT) hFE ft PD Test Conditions @ 2/10 (VCE / IC) Maximum Working Voltage Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6675 | NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
 |
2N6675 | NPN SILICON POWER TRANSISTOR | Central Semiconductor |
 |
2N6675 | (2N6674 / 2N6675) Silicon Power Transistor | SavantIC |
 |
2N6675 | NPN High Power Silicon Transistor | MA-COM |
 |
2N6675 | NPN High Power Silicon Transistor | VPT |
| Part Number | Description |
|---|---|
| 2N6671 | Bipolar NPN Device |
| 2N6672 | Bipolar NPN Device |
| 2N6673 | Bipolar NPN Device |
| 2N6676 | Bipolar NPN Device |
| 2N6677 | Bipolar NPN Device |
| 2N6678 | HIGH VOLTAGE NPN POWER TRANSISTOR |
| 2N6653 | Bipolar NPN Device |
| 2N6654 | Bipolar NPN Device |
| 2N6655 | Bipolar NPN Device |
| 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
