2N6676 Datasheet NPN High Power Silicon Transistor

Manufacturer: MACOM Technology Solutions

Overview: 2N6676 & 2N6678 NPN High Power Silicon Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	2N6676
Manufacturer	MACOM Technology Solutions
File Size	458.79 KB
Description	NPN High Power Silicon Transistor
Datasheet	2N6676 2N6676-MA Datasheet (PDF)

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538.
TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.

Part Number	Description	Manufacturer
2N6676	NPN POWER TRANSISTORS	GE
2N6676	(2N66xx) NPN POWER SILICON TRANSISTOR	Microsemi Corporation
2N6676	NPN High Power Silicon Transistor	VPT
2N6676	Bipolar NPN Device	Seme LAB
2N6676	NPN SILICON POWER TRANSISTOR	Central Semiconductor

Part Number	Description
2N6674	NPN High Power Silicon Transistor
2N6675	NPN High Power Silicon Transistor
2N6678	NPN High Power Silicon Transistor
2N6193	PNP Power Silicon Transistor
2N6193U3	NPN Power Silicon Transistor
2N6249	NPN Darlington Power Silicon Transistor
2N6250	NPN Darlington Power Silicon Transistor
2N6251	NPN Darlington Power Silicon Transistor
2N6283	NPN Transistor
2N6284	NPN Transistor