2N6676 - NPN High Power Silicon Transistor

This page provides the datasheet information for the 2N6676, a member of the 2N6676-MA NPN High Power Silicon Transistor family.

Product Overview

MA-COM

Part number	2N6676
Manufacturer	MA-COM
File Size	458.79 KB
Description	NPN High Power Silicon Transistor
Datasheet	2N6676 Datasheet
Additional preview pages of the 2N6676 datasheet.

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538.
TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.

Other Datasheets by MA-COM

Published: Jul 5, 2017 |