Datasheet Summary
2N6676 & 2N6678
NPN High Power Silicon Transistor
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538
- TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter Off Characteristics
Collector
- Emitter Breakdown Voltage
Collector
- Emitter Cutoff Current Emitter
- Base Cutoff Current Collector
- Base Cutoff Current
On Characteristics1 Forward Current Transfer Ratio
Test Conditions
Symbol Units Min.
IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678
V(BR)CEO Vdc
VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6678
ICEX µAdc
VEB = 7 Vdc
IEBO mAdc
VCB = 450 Vdc, 2N6676 VCB = 650 Vdc, 2N6678
ICBO mAdc
300 400
- -
- IC = 1 Adc, VCE = 3 Vdc...
