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2N6675 - NPN High Power Silicon Transistor

Download the 2N6675 datasheet PDF. This datasheet also covers the 2N6674-MA variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Test Conditions IC = 200 mAdc 2N6674 2N6675 Symbol Units Min. V(BR)CEO Vdc 300 400 Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Sustaining Voltage Base - Emitter Saturation Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6674-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N6675 NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N6675 NPN SILICON POWER TRANSISTOR Central Semiconductor
2N6675 (2N6674 / 2N6675) Silicon Power Transistor SavantIC
2N6675 Bipolar NPN Device Seme LAB
2N6675 NPN High Power Silicon Transistor VPT

Other Datasheets by MACOM Technology Solutions

Part Number Description
2N6674 NPN High Power Silicon Transistor
2N6676 NPN High Power Silicon Transistor
2N6678 NPN High Power Silicon Transistor
2N6193 PNP Power Silicon Transistor
2N6193U3 NPN Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6674 & 2N6675 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Test Conditions IC = 200 mAdc 2N6674 2N6675 Symbol Units Min. V(BR)CEO Vdc 300 400 Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Sustaining Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674 VCE = 650 Vdc, VBE = -1.