2N6675 Datasheet | MACOM Technology Solutions

2N6674 & 2N6675 NPN High Power Silicon Transistor Features - Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 - TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Test Conditions IC = 200 mAdc 2N6674 2N6675 Symbol Units Min. V(BR)CEO Vdc 300 400 Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Sustaining Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674 VCE = 650 Vdc, VBE =...