Datasheet4U Logo Datasheet4U.com

2N6675 - NPN High Power Silicon Transistor

Download the 2N6675 datasheet PDF. This datasheet also covers the 2N6674 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537.
  • TO-3 (TO-204AA) Package.
  • Designed for High Voltage, High Speed Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6674-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6675
Manufacturer VPT
File Size 373.51 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N6675 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6674 & 2N6675 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 • TO-3 (TO-204AA) Package • Designed for High Voltage, High Speed Switching Applications • Ideal for Regulators, Inverters and Deflection Circuits Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current IC = 200 mA dc 2N6674 2N6675 V(BR)CEO Vdc 300 400 VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675 ICEX1 mA dc — VEB = 7 V dc VCB = 450 V dc, 2N6674 VCB = 650 V dc, 2N6675 IEBO mA dc ICBO mA dc — — — 0.1 2.0 1.