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2N6674 - NPN High Power Silicon Transistor

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537.
  • TO-3 (TO-204AA) Package.
  • Designed for High Voltage, High Speed Switching.

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Datasheet Details

Part number 2N6674
Manufacturer VPT
File Size 373.51 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N6674 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6674 & 2N6675 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 • TO-3 (TO-204AA) Package • Designed for High Voltage, High Speed Switching Applications • Ideal for Regulators, Inverters and Deflection Circuits Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current IC = 200 mA dc 2N6674 2N6675 V(BR)CEO Vdc 300 400 VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675 ICEX1 mA dc — VEB = 7 V dc VCB = 450 V dc, 2N6674 VCB = 650 V dc, 2N6675 IEBO mA dc ICBO mA dc — — — 0.1 2.0 1.