The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 • TO-3 (TO-204AA) Package • Designed for High Voltage, High Speed Switching Applications • Ideal for Regulators, Inverters and Deflection Circuits
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current
IC = 200 mA dc 2N6674 2N6675
V(BR)CEO Vdc
300 400
VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675
ICEX1 mA dc
—
VEB = 7 V dc VCB = 450 V dc, 2N6674 VCB = 650 V dc, 2N6675
IEBO mA dc ICBO mA dc
— —
—
0.1 2.0 1.