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2N6676 - NPN High Power Silicon Transistor

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538.
  • TO-3 (TO-204AA) Package Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc 300 400 VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE =.

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Datasheet Details

Part number 2N6676
Manufacturer VPT
File Size 400.69 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N6676 Datasheet

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Other Datasheets by VPT

Part Number Description
2N6674 NPN High Power Silicon Transistor
2N6675 NPN High Power Silicon Transistor
2N6678 NPN High Power Silicon Transistor
2N6648 PNP Silicon Power Darlington Transistors
2N6649 PNP Silicon Power Darlington Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6676 & 2N6678 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538 • TO-3 (TO-204AA) Package Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc 300 400 VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.