2N6676 Datasheet NPN High Power Silicon Transistor

Manufacturer: VPT

Overview: 2N6676 & 2N6678 NPN High Power Silicon Transistor.

Datasheet Details

Part number	2N6676
Manufacturer	VPT
File Size	400.69 KB
Description	NPN High Power Silicon Transistor
Datasheet	2N6676-VPT.pdf

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538.
TO-3 (TO-204AA) Package Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc 300 400 VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676 VCE =.

Part Number	Description	Manufacturer
2N6676	NPN POWER TRANSISTORS	GE
2N6676	(2N66xx) NPN POWER SILICON TRANSISTOR	Microsemi Corporation
2N6676	Bipolar NPN Device	Seme LAB
2N6676	NPN SILICON POWER TRANSISTOR	Central Semiconductor
2N6676	NPN High Power Silicon Transistor	MA-COM

Part Number	Description
2N6674	NPN High Power Silicon Transistor
2N6675	NPN High Power Silicon Transistor
2N6678	NPN High Power Silicon Transistor
2N6648	PNP Silicon Power Darlington Transistors
2N6649	PNP Silicon Power Darlington Transistors
2N6650	PNP Silicon Power Darlington Transistors
2N6660	N-Channel Power MOSFET
2N6661	N-Channel Power MOSFET
2N6032	NPN High Power Silicon Transistor
2N6033	NPN High Power Silicon Transistor