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2N6678

Manufacturer: VPT Components

2N6678 datasheet by VPT Components.

This datasheet includes multiple variants, all published together in a single manufacturer document.

2N6678 datasheet preview

2N6678 Datasheet Details

Part number 2N6678
Datasheet 2N6678 2N6676 Datasheet (PDF)
File Size 400.69 KB
Manufacturer VPT Components
Description NPN High Power Silicon Transistor
2N6678 page 2 2N6678 page 3

2N6678 Overview

2N6676 & 2N6678 NPN High Power Silicon Transistor.

2N6678 Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538
  • TO-3 (TO-204AA) Package
  • Emitter Breakdown Voltage
  • Emitter Cutoff Current Emitter
  • Base Cutoff Current Collector
  • Base Cutoff Current
  • VEB = 7 Vdc
  • VCB = 450 Vdc, 2N6676 VCB = 650 Vdc, 2N6678
  • IC = 1 Adc, VCE = 3 Vdc IC = 15 Adc, VCE = 3 Vdc
  • Emitter Sustaining Voltage

2N6678 from other manufacturers

View 2N6678 datasheet index

Brand Logo Part Number Description Other Manufacturers
GE Logo 2N6678 NPN POWER TRANSISTORS GE
Microsemi Corporation Logo 2N6678 (2N66xx) NPN POWER SILICON TRANSISTOR Microsemi Corporation
Seme LAB Logo 2N6678 HIGH VOLTAGE NPN POWER TRANSISTOR Seme LAB
INCHANGE Logo 2N6678 NPN Transistor INCHANGE
Central Semiconductor Logo 2N6678 NPN SILICON POWER TRANSISTOR Central Semiconductor
VPT Components logo - Manufacturer

More Datasheets from VPT Components

View all VPT Components datasheets

Part Number Description
2N6674 NPN High Power Silicon Transistor
2N6675 NPN High Power Silicon Transistor
2N6676 NPN High Power Silicon Transistor
2N6648 PNP Silicon Power Darlington Transistors
2N6649 PNP Silicon Power Darlington Transistors
2N6650 PNP Silicon Power Darlington Transistors
2N6660 N-Channel Power MOSFET
2N6661 N-Channel Power MOSFET
2N6032 NPN High Power Silicon Transistor
2N6033 NPN High Power Silicon Transistor

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