BUL54ASMD Datasheet | Seme LAB

FEATURES - Multi- base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. - Ion implant and high accuracy masking for tight control of characteristics from batch to batch. - Triple Guard Rings for improved control of high voltages. SMD1 Package Pad 1 - Base Pad 2 - Collector Pad 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Rth Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Derate above 25°C when used on efficient heatsink Operating and Storage Temperature Range Thermal Resistance Junction - Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk 1000V 500V 10V 2A 4A 0.8A 35W 0.2W/°C - 65 to 200°C 3.5°C/W Prelim. 7/00 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. 500 1000 IC = 0 VCC = 500V VCB = 1000V TC = 125°C IC = 0 IC = 100m A h FE- DC Current Gain IC = 500m A IC = 1A IC = 100m A VCE(sat)- Collector - Emitter Saturation Voltage IC = 500m A IC = 1A VBE(sat)- VBE(on)- Base - Emitter Saturation Voltage Base - Emitter On Voltage DYNAMIC CHARACTERISTICS f T Cob Transition Frequency Output Capacitance SECOND BREAKDOWN Second Breakdown Collector Current IC = 100m A f = 10MHz VCB = 20V IE = 0 VCE = 50V t = 1s 0.8 0.08 2 0.04 0.2 4 0.1 m Typ. Max. Unit ELECTRICAL CHARACTERISTICS VCEO(sus)- Collector - Emitter Sustaining Voltage IC = 100m A V(BR)CBO- V(BR)EBO- ICEO- ICBO- IEBO- Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Emitter Cut- Off Current Collector - Base Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A IB = 0 IE = 0 V 100 10 100 10 100 m m 10 m VEB = 5V TC = 125°C VCE = 4V VCE = 4V VCE =...