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BUL54ASMD - NPN Transistor

Datasheet Summary

Features

  • Multi.
  • base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages. SMD1 Package Pad 1.
  • Base Pad 2.
  • Collector Pad 3.
  • Emitter.

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Datasheet preview – BUL54ASMD

Datasheet Details

Part number BUL54ASMD
Manufacturer Seme LAB
File Size 20.70 KB
Description NPN Transistor
Datasheet download datasheet BUL54ASMD Datasheet
Additional preview pages of the BUL54ASMD datasheet.

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Full PDF Text Transcription

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BUL54ASMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 1 3 2 • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING (tf = 40ns) • EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE • HIGH ENERGY RATING • EFFICIENT POWER SWITCHING • MILITARY AND HI–REL OPTIONS 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .
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