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BUL54BFI - NPN Transistor

Datasheet Summary

Features

  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages.

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Datasheet preview – BUL54BFI

Datasheet Details

Part number BUL54BFI
Manufacturer Seme LAB
File Size 18.76 KB
Description NPN Transistor
Datasheet download datasheet BUL54BFI Datasheet
Additional preview pages of the BUL54BFI datasheet.

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Full PDF Text Transcription

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LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL54BFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast applications • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 1 2 3 1.3 14.0 0.85 2.54 2.54 FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages.
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