• Part: D1023UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 77.80 KB
Download D1023UK Datasheet PDF
Seme LAB
D1023UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 16 d B MINIMUM APPLICATIONS - HF/VHF MUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 117W BVDSS Drain - Source Breakdown Voltage 70V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 15A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:...