• Part: D1083UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 18.41 KB
Download D1083UK Datasheet PDF
Seme LAB
D1083UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13d B MINIMUM - SURFACE MOUNT APPLICATIONS TO- 263 PACKAGE PIN 1 - GATE PIN 3 - SOURCE PIN 2 - DRAIN PIN 4 - DRAIN - LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A - 65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Prelim. 7/96 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain- Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance- mon Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer...