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TetraFET
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
D1083UK
METAL GATE RF SILICON FET
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13dB MINIMUM • SURFACE MOUNT
APPLICATIONS
TO–263 PACKAGE
PIN 1 – GATE PIN 3 – SOURCE PIN 2 – DRAIN PIN 4 – DRAIN
• LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A –65 to 125°C 150°C
Semelab plc.
Telephone (01455) 556565.
D1083UK Datasheet
