• Part: D1084UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 19.43 KB
Download D1084UK Datasheet PDF
Seme LAB
D1084UK
FEATURES 12.70 13.71 9.01 9.52 2 3 0.726 min. - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. - LOW NOISE - HIGH GAIN - 13d B MINIMUM - SURFACE MOUNT 2.28 2.79 4.82 5.33 APPLICATIONS TO- 220 PLASTIC PACKAGE PIN 1 - GATE PIN 3 - SOURCE PIN 2 - DRAIN PIN 4 - DRAIN - LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A - 65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Prelim. 7/96 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain- Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current...