• Part: D2029UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 15.44 KB
Download D2029UK Datasheet PDF
Seme LAB
D2029UK
FEATURES 0.10 TYP. 0.508 0.10 TYP. - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 - SOURCE PIN 2 - DRAIN PIN 3 - DRAIN PIN 4 - SOURCE PIN 5 - SOURCE PIN 6 - GATE PIN 7 - GATE PIN 8 - SOURCE - VERY LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM Ceramic Material: Alumina. Parts can also be supplied with Al N or Be O for improved thermal resistance. Contact Semelab for details. APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://.semelab.co.uk E-mail: sales@semelab.co.uk 17.5W 65V ±20V 1A - 65 to 150°C 200°C Prelim. 2/99 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless...