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PR EL IM INA RY
S a MECHANICAL atDATA .D w w w e e h U 4 t
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • VERY LOW Crss
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TetraFET
D2020UK–P
METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
• SUITABLE FOR BROAD BAND APPLICATIONS
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• SIMPLE BIAS CIRCUITS • LOW NOISE
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• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
SOIC PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
D2020UK-P Datasheet
