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TetraFET
D2081UK
METAL GATE RF SILICON FET
MECHANICAL DATA Dimensions in mm.
0 .3 2 0 .2 4
0 .1 0 0 .0 2 16˚ m ax. 13˚
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 12V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
1 .7 0 m ax. 10˚ m ax. 6 .7 6 .3 3 .1 2 .9
4
3 .7 7 .3 3 .3 6 .7
• SIMPLE BIAS CIRCUITS • LOW NOISE (Typical < 2dB NF) • HIGH GAIN – 11dB MINIMUM • SURFACE MOUNT
3
1
2
1 .0 5 0 .8 5
2 .3 0 4 .6 0
0 .8 0 0 .6 0
APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 2.