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TetraFET
D2253UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D B E
8 1 7 6 3 4 2
C
R A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL
FEATURES
I P H G
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 6 Gate 2 PIN 7 Gate 1
PIN 4 Source (Common) PIN 8 Source (Common)
DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 0.25 Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max 0.07 Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .