D2290UK
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW Crss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN
- 10 d B MINIMUM
APPLICATIONS
- HF/VHF/UHF MUNICATIONS from 1 MHz to 1 GHz
PD BVDSS BVGSS ID(sat) Tstg Tj
Power Dissipation Drain
- Source Breakdown Voltage Gate
- Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1W 40V ±20V 2A
- 65 to 125°C 150°C
Document Number 3890 Issue 3
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain- Source BVDSS Breakdown Voltage
VGS = 0
ID = 10m A
IDSS
Zero Gate Voltage Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th) Gate Threshold Voltage-
ID = 10m A
VDS = VGS
0.5 gfs
Forward Transconductance-
VDS = 10V
ID =...
