D2294UK - METAL GATE RF SILICON FET

Seme LAB

Datasheet Details

Part number	D2294UK
Manufacturer	Seme LAB
File Size	73.13 KB
Description	METAL GATE RF SILICON FET
Datasheet	D2294UK Datasheet
Additional preview pages of the D2294UK datasheet.

📁 Similar Datasheet

D2294UK - RF Silicon Mosfet (TT)
D2200 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
D2200N - Rectifier Diode (Infineon)
D2201 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
D2201N - Crow Bar Diode (Infineon)
D2202 - 2SD2202 (Sanyo)
D2204 - 2SD2204 (Toshiba Semiconductor)
D2206 - 2SD2206 (Toshiba)
D2209 - Torque Sensor (TRANSMETRA)
D2209 - 2SD2209 (Panasonic)

Other Datasheets by Seme LAB

D2290UK - METAL GATE RF SILICON FET
D2293UK - METAL GATE RF SILICON FET
D2201UK - METAL GATE RF SILICON FET
D2202UK - METAL GATE RF SILICON FET
D2203UK - METAL GATE RF SILICON FET
D2204UK - METAL GATE RF SILICON FET
D2205UK - METAL GATE RF SILICON FET
D2208UK - METAL GATE RF SILICON FET

Full PDF Text Transcription

Click to expand full text

TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 11 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current * Storage Temperature Maximum Operating Junction Temperature 50W 40V ±20V 12A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455) 556565.

Published: Mar 27, 2005 |