• Part: IRFY044
  • Description: N-CHANNEL POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Seme LAB
  • Size: 47.92 KB
Download IRFY044 Datasheet PDF
Seme LAB
IRFY044
IRFY044 is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 60V 20A 0.035Ω 10.41 10.92 2.54 BSC 2.65 2.75 - HERMETICALLY SEALED TO- 220 METAL PACKAGE - SIMPLE DRIVE REQUIREMENTS TO- 220M - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source - LIGHTWEIGHT - SCREENING OPTIONS AVAILABLE - ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate - Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 20A 20A 128A 60W 0.48W/°C - 55 to 150°C 2.1°C/W max. 80°C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 11/95 .. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On- State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain (“Miller”) Charge Turn- On Delay Time Rise Time Turn- Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1m A VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 VGS = 20V VGS...