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IRFY044CM Datasheet Power MOSFET N-channe

Manufacturer: International Rectifier (now Infineon)

Overview: Provisional Data Sheet No. PD 9.1285C HEXFET® POWER MOSFET .. IRFY044CM N-CHANNEL 60 Volt, 0.040 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance bined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary Part Number IRFY044CM BVDSS 60V RDS(on) 0.

Key Features

  • n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY044CM Units A W W/K… V mJ A mJ V/ns °C g Continuous Drain Current 16.
  • Continuous Drain Current 16.
  • Pulsed Drain Current  156 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy ‚ 1.

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