IRFY044C
IRFY044C is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
60V 20A 0.035Ω
10.41 10.92
- HERMETICALLY SEALED TO- 220 METAL PACKAGE
- SIMPLE DRIVE REQUIREMENTS
- LIGHTWEIGHT
- ALL LEADS ISOLATED FROM CASE
2.54 BSC
2.65 2.75
TO- 220M
- Metal Package Ceramic Lead Seals
Pad 1
- Gate Pad 2
- Drain Pad 3
- Source
AVAILABLE SCREENINGS
FULL ASSESSMENT LEVEL SEQUENCE A SEQUENCE B SEQUENCE C SEQUENCE D IRFY044C.MOD IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV IRFY044CJTX
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate
- Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 20A 20A 128A 60W 0.48W/°C
- 55 to 150°C 2.1°C/W max. 80°C/W max.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain
- Source Breakdown Voltage Breakdown Voltage Static Drain
- Source On- State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate
- Source Leakage Reverse Gate
- Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate
- Source Charge Gate
- Drain (“Miller”) Charge Turn- On Delay Time Rise Time Turn- Off Delay Time Fall Time
Test...
