Seme LAB IRFY044C
N-CHANNEL POWER MOSFET
| Part No. | IRFY044C |
|---|---|
| Datasheet | IRFY044C Download |
| Manufacturer |  Seme LAB |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 N–CHANNEL POWER MOSFET FOR HI–RELAPPLICATIONS
VDSS ID(cont) RDS(on)FEATURES
0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 60V 20A 0.035Ω 10.41 10.92● HERMETICALLY SEALED TO–220 METAL PACKAGE
● SIMPLE DRIVE REQUIREMENTS
● LIGHTWEIGHT
● ALL LEADS ISOLATED FROM CASE 2.54 BSC 2.65 2.75 TO–220M – Metal Package Ceramic Lead Seals Pad 1 – Gate Pad 2 – Drain Pad 3 – Source AVAILABLE SCREENINGS FULL ASSESSMENT LEVEL SEQUENCE A SEQUENCE B SEQUENCE C SEQUENCE D IRFY044C.MOD IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV IRFY044CJTX
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate – Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 20A 20A 128A 60W 0.48W/°C –55 to 150°C 2.1°C/W max.