Datasheet Summary
TO- 3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1.47 (0.058) 1.60 (0.063)
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
VDSS 1000V 9A ID(cont) RDS(on) 1.100Ω
- Faster Switching
- Lower Leakage
- TO- 3 Hermetic Package
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30.4 (1.197)
Pin 1
- Gate
16.64 (0.655) 17.15 (0.675)
Pin 2
- Source
Case
- Drain
22.23 (0.875) max.
StarMOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,...