N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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LAB
MECHANICAL DATA Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035)
SEME
SML10–12A–258R
FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO–258 METAL PACKAGE
17.96 (0.707) 17.70 (0.697)
13.84 (0.545) 13.58 (0.535)
1 2 3
4.19 (0.165) 3.94 (0.155) Dia.
21.21 (0.835) 20.70 (0.815)
19.05 (0.750) 12.70 (0.500)
A1
K1/A2
K2
FEATURES
5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. 3.56 (0.140) BSC
• TO–258 HERMETIC ISOLATED PACKAGE • HI–REL APPLICATIONS • FAST RECOVERY (<50ns)
TO–258 Package.
Pin 1 – A1 Pin 2 – K1/A2 Pin 3 – K2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VRRM IF TJ TSTG Peak Repetitive Reverse Voltage Average Forward Current Storage Temperature Range
d = 0.