• Part: SML3010T254
  • Description: FAST RECOVERY EPITAXIAL DIODE
  • Category: Diode
  • Manufacturer: Seme LAB
  • Size: 14.65 KB
Download SML3010T254 Datasheet PDF
Seme LAB
SML3010T254
SML3010T254 is FAST RECOVERY EPITAXIAL DIODE manufactured by Seme LAB.
FEATURES - LOW LOSSES AT HIGH SWITCHING FREQUENCIES - HI- REL APPLICATIONS - VERY FAST RECOVERY TIME - LOW IRM VALUES - SOFT RECOVERY BEHAVIOUR 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC TO- 254 Package. Pin 1 - Cathode Pin 2 - N/C Pin 3 - Anode ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) IFRMS IFAVM IFRM IFSM Maximum RMS Forward Current Average Forward Current Repetitive Peak Forward Current TJ = 150°C TC = 85°C, pulse limited by TJM TP < 10µs TJ = 45°C IFSM Peak One Cycle Surge Forward Current TJ = 150°C t = 10ms (50Hz) , Sine t = 8.3ms (60Hz) , Sine II2dt PD TJ TJM TSTG Integral II2dt Rating Power Dissipation Operating Temperature Maximum Operating Junction Temperature Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk 70A 30A 375A t = 10ms (50Hz) , Sine t = 8.3ms (60Hz) , Sine 200A 210A 185A 195A 200A 180A TBA - 40 to +150°C 150°C - 40 to +150°C Prelim. 3/95 Peak One Cycle Surge Forward Current TJ = 45°C TC = 85°C t = 10ms (50Hz) , Sine t = 8.3ms (60Hz) , Sine Semelab plc. Parameter IR VF trr Reverse Leakage Current Forward Voltage Reverse Recovery Time SEME SML30- 10- T254 PRELIMINARY DATA ELECTRICAL CHARACTERISTICS Test Conditions VR = 800V VR = 800V IF = 36A IF = 1A di/dt = -15A/µs IF = 30A IRM RθJC RθJA Peak Reverse Current di F/dt = - 240A/µs L ≤ 0.05µH Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient TBA TBA °C/W Min. TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C VR = 30V TJ = 25°C VR = 540V TJ =...