SML30B40 datasheet by Seme LAB.
| Part number | SML30B40 |
|---|---|
| Datasheet | SML30B40_SemeLAB.pdf |
| File Size | 20.34 KB |
| Manufacturer | Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
|
|
SML30B40 TO 247AD Package Outline. 5.25 (0.215) BSC Pin 1 Gate Pin 2 Drain Pin 3 Source D G S StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
| Part Number | Description |
|---|---|
| SML30B48 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML3010T254 | FAST RECOVERY EPITAXIAL DIODE |
| SML30A33 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML30J130 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML30J70 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML30L76 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML010FBDH06 | SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE |
| SML1001R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001R3AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
