SML40L57 Datasheet | Seme LAB

TO- 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) VDSS 400V 57A ID(cont) RDS(on) 0.070W - - - - Faster Switching Lower Leakage 100% Avalanche Tested Popular TO- 264 Package 0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118) 19.81 (0.780) 21.39 (0.842) Pin 1 - Gate Pin 2 - Drain 2.29 (0.090) 2.69 (0.106) 0.76 (0.030) 1.30 (0.051) 5.45 (0.215) BSC 2 plcs. Pin 3 - Source Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Gate - Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 400 57 228 ±30 ±40 520 4.16 - 55 to 150 300 57 50 2500 V A A V W W/°C °C A m J 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 1.54m H, RG = 25W, Peak IL = 57A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V)...